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| 7MBP200RA060 IGBT-IPM R series Features * Temperature protection provided by directly detecting the junction temperature of the IGBTs * Low power loss and soft switching * High performance and high reliability IGBT with overheating protection * Higher reliability because of a big decrease in number of parts in built-in control circuit 600V / 200A 7 in one-package Maximum ratings and characteristics Absolute maximum ratings(at Tc=25C unless otherwise specified) Item DC bus voltage DC bus voltage (surge) DC bus voltage (short operating) Collector-Emitter voltage DB Reverse voltage INV Collector current Symbol VDC Rating Min. VDC(surge) VSC VCES VR DC IC 1ms ICP Duty=57.8% -IC Collector power dissipation One transistor PC DB Collector current DC IC 1ms ICP Forward current of Diode IF Collector power dissipation One transistor PC Junction temperature Tj Input voltage of power supply for Pre-Driver VCC*1 Input signal voltage Vin *2 Input signal current Iin Alarm signal voltage VALM*3 Alarm signal current IALM *4 Storage temperature Tstg Operating case temperature Top Isolating voltage (Case-Terminal) Viso *5 Screw torque Mounting (M5) Terminal (M5) *1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10. *3 Apply VALM between terminal No. 16 and 10. *4 Apply IALM to terminal No. 16. *5 50Hz/60Hz sine wave 1 minute. *6 Recommendable Value : 2.5 to 3.0 N*m Unit V V V V V A A A W A A A W C V V mA V mA C C kV N*m N*m Max. 450 500 400 600 600 200 400 200 735 75 150 75 320 150 20 Vz 1 Vcc 15 125 100 AC2.5 3.5 *6 3.5 *6 0 0 200 0 0 0 0 -40 -20 - Fig.1 Measurement of case temperature Electrical characteristics of power circuit (at Tc=Tj=25C, Vcc=15V) Item INV Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of Diode Symbol ICES VCE(sat) VF ICES VCE(sat) VF Condtion VCE=600V input terminal open Ic=200A -Ic=200A VCE=600V input terminal open Ic=75A -Ic=75A Min. - - - - - - Typ. - - - - - - Max. 1.0 2.8 3.0 1.0 2.8 3.3 Unit mA V V mA V V DB 7MBP200RA060 Electrical characteristics of control circuit(at Tc=Tj=25C, Vcc=15V) Item Power supply current of P-line side Pre-driver(one unit) Power supply current of N-line side three Pre-driver Input signal threshold voltage (on/off) Input zener voltage Over heating protection temperature level Hysteresis IGBT chips over heating protection temperature level Hysteresis Collector current protection level INV DB Over current protection delay time (Fig.2) Under voltage protection level Hysteresis Alarm signal hold time SC protection delay time Limiting resistor for alarm *7 Switching frequency of IPM Symbol Iccp ICCN Vin(th) VZ TCOH TCH TjOH TjH IOC IOC tDOC VUV VH tALM tSC RALM IGBT-IPM Condition Min. Typ. fsw=0 to 15kHz Tc=-20 to 100C *7 6 fsw=0 to 15kHz Tc=-20 to 100C *7 24 ON 1.00 1.35 OFF 1.70 2.05 Rin=20k ohm 8.0 VDC=0V, Ic=0A, Case temperature, Fig.1 110 20 surface of IGBT chips 150 20 Tj=125C Collector current 300 Tj=125C Collector current 113 Tj=25C Fig.2 10 11.0 0.2 1.5 2 Tj=25C Fig.3 1425 1500 Max. 32 114 1.70 2.40 125 12.5 12 1575 Unit mA mA V V V C C C C A A s V V ms s ohm Dynamic characteristics(at Tc=Tj=125C, Vcc=15V) Item Switching time (IGBT) Switching time (FWD) Symbol Condition ton toff trr IC=200A, VDC=300V IF=200A, VDC=300V Min. 0.3 Typ. Max. 3.6 0.4 Unit s s s Thermal characteristics(Tc=25C) Item Junction to Case thermal resistance INV DB Case to fin thermal resistance with compound IGBT FWD IGBT Symbol Rth(j-c) Rth(j-c) Rth(j-c) Rth(c-f) Typ. 0.05 Max. 0.17 0.36 0.39 Unit C/W C/W C/W C/W Recommendable value Item DC bus voltage Operating power supply voltage range of Pre-driver Switching frequency of IPM Screw torque Mounting (M5) Terminal (M5) Symbol VDC VCC fSW Min. 200 13.5 1 2.5 2.5 Typ. 15 Max. 400 16.5 20 3.0 3.0 Unit V V kHz N*m N*m 7MBP200RA060 Block diagram IGBT-IPM Pre-drivers include following functions a) Amplifier for driver b) Short circuit protection c) Undervoltage lockout circuit d) Over current protection e) IGBT chip over heating protection Outline drawings, mm Mass : 920g 7MBP200RA060 Characteristics (Representative) Control circuit IGBT-IPM Power supply current vs. Switching frequency Tj=100C 80 Power supply current : Icc (mA) Input signal threshold voltage : Vin(on),Vin(off) (V) 70 60 50 40 30 20 10 0 0 5 10 15 20 Switching frequency : fsw (kHz) 25 Vcc=17V Vcc=15V Vcc=13V P-side N-side Vcc=17V Vcc=15V Vcc=13V 2.5 3 Input signal threshold voltage vs. Power supply voltage Tj=25C Tj=125C } Vin(off) 2 1.5 1 0.5 0 12 13 14 15 16 17 Power supply voltage : Vcc (V) 18 } Vin(on) Under voltage vs. Junction temperature 14 12 Under voltage hysterisis vs. Jnction temperature 1 Under voltage hysterisis : VH (V) 0.8 Under voltage : VUVT (V) 10 8 6 4 2 0 0.6 0.4 0.2 0 20 40 60 80 100 120 140 20 40 60 80 100 120 140 Junction temperature : Tj (C) Junction temperature : Tj (C) Alarm hold time vs. Power supply voltage Over heating protection : TcOH,TjOH (C) OH hysterisis : TcH,TjH (C) 3 200 Over heating characteristics TcOH,TjOH,TcH,TjH vs. Vcc TjOH 150 TcOH 100 Alarm hold time : tALM (mSec) 2.5 Tj=125C 2 Tj=25C 1.5 1 50 TcH,TjH 0 0.5 0 12 13 14 15 16 17 18 12 13 14 15 16 17 18 Power supply voltage : Vcc (V) Power supply voltage : Vcc (V) 7MBP200RA060 Inverter IGBT-IPM Collector current vs. Collector-Emitter voltage Tj=25C 350 Vcc=15V 300 Collector Current : Ic (A) 250 200 150 100 50 0 0 0.5 1 1.5 2 2.5 3 Collector-Emitter voltage : Vce (V) 3.5 Vcc=17V Vcc=13V 300 Collector Current : Ic (A) 250 350 Collector current vs. Collector-Emitter voltage Tj=125C Vcc=15V Vcc=17V Vcc=13V 200 150 100 50 0 0 0.5 1 1.5 2 2.5 3 Collector-Emitter voltage : Vce (V) 3.5 Switching time vs. Collector current Edc=300V,Vcc=15V,Tj=25C 10000 Switching time : ton,toff,tf (nSec) 10000 toff 1000 ton Switching time : ton,toff,tf (nSec) Switching time vs. Collector current Edc=300V,Vcc=15V,Tj=125C toff ton 1000 tf tf 100 100 10 0 50 100 150 200 250 Collector current : Ic (A) 300 350 10 0 50 100 150 200 250 Collector current : Ic (A) 300 350 Forward current vs. Forward voltage 350 300 125C Forward Current : If (A) 250 25C 200 150 100 50 0 0 0.5 1 1.5 2 2.5 3 Forward voltage : Vf (V) 1000 Reverse recovery current : Irr(A) Reverse recovery time : trr(nSec) Reverse recovery characteristics trr,Irr vs. IF trr125C trr25C Irr125C Irr25C 100 10 0 50 100 150 200 250 300 350 Forward current : IF(A) 7MBP200RA060 IGBT-IPM Transient thermal resistance 1 Thermal resistance : Rth(j-c) (C/W) 2000 1800 Collector current : Ic (A) FWD IGBT 0.1 1600 1400 1200 1000 800 600 400 200 0 0.01 0.1 1 0 Reversed biased safe operating area Vcc=15V,Tj 125C SCSOA (non-repetitive pulse) RBSOA (Repetitive pulse) 100 200 300 400 500 600 700 0.01 0.001 Pulse width :Pw (sec) Collector-Emitter voltage : Vce (V) Power derating for IGBT (per device) 800 Collecter Power Dissipation : Pc (W) 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 Case Temperature : Tc (C) Collecter Power Dissipation : Pc (W) 350 300 250 200 150 100 50 0 0 20 Power derating for FWD (per device) 40 60 80 100 120 140 160 Case Temperature : Tc (C) Switching Loss vs. Collector Current Edc=300V,Vcc=15V,Tj=25C Switching loss : Eon,Eoff,Err (mJ/cycle) Switching loss : Eon,Eoff,Err (mJ/cycle) 15 Switching Loss vs. Collector Current Edc=300V,Vcc=15V,Tj=125C 15 Eon 10 10 Eon 5 Eoff Err 0 0 50 100 150 200 Collector current : Ic (A) Eoff 5 Err 0 0 50 100 150 200 Collector current : Ic (A) 7MBP200RA060 IGBT-IPM Over current protection vs. Junction temperature Vcc=15V 800 Over current protection level : Ioc(A) 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 Junction temperature : Tj(C) 7MBP200RA060 Brake IGBT-IPM Collector current vs. Collector-Emitter voltage Tj=25C 120 100 80 60 40 20 0 0 0.5 1 1.5 2 2.5 3 3.5 Collector-Emitter voltage : Vce (V) Vcc=17V Vcc=13V Vcc=15V 120 Collector current vs. Collector-Emitter voltage Tj=125C Vcc=15V Vcc=17V Collector Current : Ic (A) 100 Vcc=13V 80 60 40 20 0 0 0.5 1 1.5 2 2.5 3 3.5 Collector-Emitter voltage : Vce (V) Collector Current : Ic (A) Transient thermal resistance 1 Thermal resistance : Rth(j-c) (C/W) IGBT Collector current : Ic (A) 750 675 600 525 450 375 300 225 150 75 0 0.01 0.1 1 0 Reversed biased safe operating area Vcc=15V,Tj 125C 0.1 SCSOA (non-repetitive pulse) RBSOA (Repetitive pulse) 100 200 300 400 500 600 700 0.01 0.001 Pulse width :Pw (sec) Collector-Emitter voltage : Vce (V) P o w er d eratin g fo r IG B T (pe r d ev ic e ) 3 50 C o lle cter P o w er D iss ip ation : P c (W ) 3 00 2 50 2 00 1 50 1 00 50 0 0 20 40 60 80 1 00 1 20 1 40 1 60 C a se T e m p era ture : T c (C ) Over current protection level : Ioc(A) Over current protection vs. Junction temperature Vcc=15V 200 150 100 50 0 0 20 40 60 80 100 120 140 Junction temperature : Tj(C) This datasheet has been download from: www..com Datasheets for electronics components. |
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